| 摘要 |
PURPOSE:To obtain the titled element excellent in practicability by a method wherein a transparent film of polyethersulphon resin is used as the substrate material by vacuum deaeration on heating to a specific temperature. CONSTITUTION:On one surface of a substrate 1 formed out of a transparent film of polyethersulphon treated by vacuum deaeration at e.g. 195 deg.C in a range of heating temperature of 180-200 deg.C, ITO or SnO2 is formed as a clear electrode 2 by vacuum vapor deposition in the form of a required pattern. Successively, P- I-N layers are deposited in succession with required thicknesses by decomposing monosilane gas by the glow discharge of plasma CVD, diborane gas as the P- layer dopant, and phosphine as the N-layer dopant, resulting in the formation of an a-Si layer 3 as an electromotive element. The substrate temperature at this time is set at 185-190 deg.C. Next, the back electrode 4 is provided thereon by evaporating a metal such as aluminum or chromium through evaporation. Such the use of an insulating polyethersulphon film for the substrate enables high voltages to be easily obtained in construction of a plurality of cells on the same substrate by patterning the clear electrode 2, a-Si layer 3, and back electrode 4. |
