| 摘要 |
PURPOSE:To produce a thin carbon film having excellent properties, easily at a high speed, by carrying out the plasma decomposition of a carbon compound gas to deposit a thin film on a substrate, and directing charged high-energy particles toward the deposited film by an intermediate electrode. CONSTITUTION:A carbon compound gas composed of CH4, etc. mixed with a carrier gas such as H2, Ar, etc. is introduced into a vacuum system through the inlet 21 while discharging the gas through the outlet 25, and plasma of the gas is formed in the discharge-maintaining space 3 by the electric field and the magnetic field generated by the magnet coil 4. A thin film is deposited on the substrate 1 heated with a heater 8 at a low temperature (about <=300 deg.C), by this process. Simultaneous to the above procedure, ions of an atom having an atomic weight of about >=18, e.g., Ar, etc. supplied to the system are converted to charged high-energy particles by the electric pulses imposed by the pulse source 7 to the intermediate mesh electrode 6 placed between the discharge-maintaining space 3 and the substrate 1, and the deposition layer on the substrate 1 is bombarded intermittently with the charged particles. A diamond carbon thin film having excellent hardness, abrasion resistance, thermal conductivity, etc. can be prepared by this process. |
