| 摘要 |
PURPOSE:To enable a control electrode to be led out easily with high accuracy at a fixed position by a method wherein an almost annular control electrode lead out electrode to connect the control electrode of a semiconductor substrate to an outer control electrode is pressed on the control electrode. CONSTITUTION:The cathode electrode the first main electrode and the gate electrode the control electrode are formed on the first main surface (above in figure) of a large-capacitance gate turn off thyristor, and the anode electrode the second main electrode is formed on the second main surface (below in the figure). An annular holding groove 24a is recessed in the outer cathode electrode 24 on the first main surface side, and the annular gate lead-out electrode 14 is inserted in the holding groove 24a so as to freely move vertically. The lead-out electrode 14 is energized downward in the figure by a spring 17 inserted between this electrode and the bottom of the groove 24a, and is pressed on the gate electrode of an element 1. Thereby, the potential drop of the electrode 14 can be reduced extremely, and the uniformity of current distribution can be improved, resulting in the improvement in the cut-off ability of the gate turn off thyristor. |
