发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PURPOSE:To ensure a metallizing electrode consisting of a groove in surfficient width and depth, and to improve the reliability of a semiconductor device composed of a chip carrier type package by forming a metallizing electrode forming section to the side surface of a substrate by the groove having depth, a sectional shape thereof has size larger than the half of the width. CONSTITUTION:An outer frame for a package substrate 1 made of ceramics is formed by the substrate 1 and a cap 3 made of ceramics for hermetically sealing a cavity 2 shaped in said package substrate 1. Metallizing electrodes 11 for electrically connecting package back section electrodes 10 and metallizing wirings 6 buried in the package substrate 1 are formed to the side surface of a package, and baked at a fixed temperature, thus bonding each layer in the package substrate 1. Grooves 12 shaped to the side surface of the package substrate as the forming sections of the metallizing electrodes 11 are shaped to a semi-oblong form in size, in which depth is larger than the half of width thereof, in sections in surfaces parallel with the back of the package. The metallizing electrodes 11 in sufficient thickness can be formed because the grooves are shaped deeply.
申请公布号 JPS60194545(A) 申请公布日期 1985.10.03
申请号 JP19840049053 申请日期 1984.03.16
申请人 HITACHI SEISAKUSHO KK 发明人 KOIKE SHIYUNJI
分类号 H01L23/12;H01L21/48;H01L23/057;H01L23/08 主分类号 H01L23/12
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