| 摘要 |
PURPOSE:To sufficiently perform the high speed switching characteristic of an MOSFET by suitably combining the MOSFET and a diode. CONSTITUTION:Diodes 41-44 are connected forwardly in series at the drain or source side of MOSFETs 1-4, and diodes 45-48 are connected in antiparallel with the MOSFETs 1-4 and the diodes 45-48 connected in series. The diodes 41, 44 become ON during a period that the MOSFETs 1, 4 become ON, and the diodes 46, 47 become ON during a period that the MOSFETs 1, 4 become OFF. Accordingly, the switching time that the MOSFETs 1, 4 becomes ON from OFF does not depend upon the body drain diodes of the MOSFETs 2, 3, but depends upon the reverse recovery times of the diodes 46, 47. |
