| 摘要 |
PURPOSE:To decrease the leak of a high-pressure vessel of the Czochralski process for pulling and growing a semiconductor single crystal, by placing the mechanism to rotate and push up the raw material crucible and the mechanism to rotate and pull up the single crystal pulling shaft in the pressure vessel excepting the motors to drive the mechanisms. CONSTITUTION:The crucible 2 for receiving the raw mateial of a semiconductor single crystal is placed in the high-pressure vessel 1, and a single crystal pulling shaft 11 holding the seed of the single crystal is suspended vertically above the crucible. The mechanisms to shift and rotate the pushing shaft 3 of the crucible 2 and the pulling shaft 11 of the single crystal are placed in the chambers 21, 21 integrated to the high-pressure vessel 1. Only the motors 4, 8, 12, 16 to drive the above mechanisms are attached to the exterior part of the high-pressure vessel 1. The cylinder device to compensate the thrust load caused by the high pressure and applied to the pushing shaft 3 of the crucible and the pulling shaft 11 of the single crystal is not necessary in the present apparatus. Furthermore, the leakage can be reduced remarkably because the sealing of the apparatus is not necessary except for the parts of the rotary shafts of the motors 4, 8, 12, 16 entering into the chambers 21, 22. |
