VERFAHREN ZUR HERSTELLUNG EINES SILIZIUMFILMS AUF EINEM TRAEGER IN EINER PLASMAATMOSPHAERE

摘要

In depositing a silicon film on a heated substrate from a reactant gas in plasma state, a fluorosilane having at least one hydrogen atom such as, e.g., SiH3F, SiH2F2 or Si2H4F2 is used as at least a portion of the reactant gas. Together with such a partially fluorinated silane, the reactant gas may contain hydrogen, unsubstituted silane, tetrafluoromonosilane or an inert gas. Partially fluorinated silanes are safer than unsubstituted silanes and are advantageous over tetrafluoromonosilane in respect of the rate of growth of the silicon film.