| 摘要 |
PURPOSE:To prevent the scattering of the resistance value of a diffused resistor without causing the failure of junction between the diffused resistor and a lead part and the disconnection of the lead part by a method wherein the Si lead part is formed on the surface of a pellet by the arrangement of extension from the end of a diffused piezoresistor to its base. CONSTITUTION:The Si lead part 11 formed by the arrangement of extension from the end of the diffused resistor 4 to the base 3 is formed by epitaxial growth on thermal decomposition of SiH4 gas. An SiO2 film 7 as the protection film is formed on the surfaces of the diffused resistor 4 and the SiO lead part 11, and a hole 8 is provided in the SiO2 film on the base 3; then, the Si lead part 11 is connected to an electrode 10 via this hole 8. Thus, the Si lead part 11 is of the same material as that of a sensor pellet; therefore, the junction strength is stronger than that of an aluminum electrode, and the failure of junction due to the repetition of stress becomes difficult to generate. Since the time of forming the Si lead part 11 is very short, impurities are not diffused to the diffused resistor 4, and scattering does not generate to the resistance value of the resistor 4. |
