| 摘要 |
PURPOSE:To obtain the MESFET easy in gate length setting having a low source-gate series resistance and a low drain-gate series resistance by a method wherein an N<+> layer is split by providing a groove reaching the substrate under the N<+> layer from its surface; thereafter, an N-layer is formed in this groove by the epitaxial growing method. CONSTITUTION:The N<+> layer 7 containing an impurity such as Si is formed on the semi-insulation GaAs semiconductor substrate 6 by the epitaxial growing method. Next, the groove 9 reaching down to the N<+> layer 7 from the surface of the layer 7 is formed by etching after a resist mask 8 of desired N-layer form, thus splitting the N<+> layer 7 by this groove 9 into N<+> layers 10 and 11. After removal of the resist mask 8, the N-layer 12 is formed over the whole substrate 6 including the groove 9 by the epitaxial growing method. Thereafter, a Schottky electrode 13 is provided on the N-layer 12 above the groove 9, and an SiO2 film 14 seriving as the protection film is formed over the substrate 6. Further, the N-layer 12 and the protection film 14 at desired point on the respective N<+> layers 10 and 11 are removed, and source and drain electrodes 15 and 16 are formed; then, the SiO2 film 14 on the Schottky electrode 13 is removed. |
