| 摘要 |
PURPOSE:To enhance chemical resistance, transmittance, etc. of a base and to prevent warping and twisting by using a polymer of a specified methacrylic acid deriv. as a material of a mask base used for the manufacture process of semiconductor elements. CONSTITUTION:An intended mask base is obtained by homopolymerizing a monomer represented by formula I (R1-R3 are each H or 1-3C alkyl; R4 is fluoroalkyl, or formula II, III, or IV; R5 is H, alkyl, or alkenyl; and n is 1-5), such as cyclohexyl or phenyl methacrylate, or copolymerizing this monomer in an amt. of >=20% with a copolymerizable monomer, such as methacrylic acid or styrene, and molding the obtained homopolymer or copolymer into a desired form by injection molding or press molding or the like. |
