| 摘要 |
PURPOSE:To enable to form a semiconductor integrated circuit in a small type without damaging the characteristics by a method wherein a poly-Si layer formed on an MOS transistor is used for the cross-under wiring of the semiconductor IC. CONSTITUTION:At a semiconductor IC, a cross-under wiring 10 coming in contact with Al wirings 1, 5 is formed of poly-Si. By forming the wiring 10 on an MOS transistor using the poly-Si layer in such a way, the area can be reduced without damaging the respective characteristics. |
