| 摘要 |
PURPOSE:To enable ions to be implanted even into a wafer having a photoresist mask without breaking it by measuring the temperature of the wafer during implantation and controlling the parts of an ion implantation device according to the measurement. CONSTITUTION:An ion beam 2' controlled by an ion beam controller 13, is implanted into a wafer 7 fixed to a rotary disk 6. A noncontact-type temperature detector 14 is used to detect the temperature of the wafer 7 and a rotary disk 6. In a sampling circuit 17, the gate is opened and closed according to a signal 18 for the rotation rate of the rotary disk 6 and a signal 19 for the scanning position. Among the detected temperature signals 15, only a wafer temperature signal 20 is delivered from the sampling circuit 17. A control computer 21 compares the signal 20 with a set temperature for the water 7 and when the temperature of the wafer 7 exceeds the set level delivers control signals 22 and 23 to an ion beam controller and a cooler, thereby automatically interrupting ion implantation, decreasing the ion beam amount or achieving improved cooling. |
