| 摘要 |
PURPOSE:To obtain a desired film thickness while avoiding formation of unevenness on the surface of the film, by rotationally applying a resist solution which is dropped down on a target material in the atmosphere applied with a pressure at least higher than atmospheric pressure. CONSTITUTION:A rotatable stage 2 is received in an envelope 4 of a spinner having a resist discharge opening 4H on the bottom face thereof. A rotary shaft provided on the lower face of the stage is projected outside the envelope 4 through an O ring 6. A semiconductor wafer 1 is put on the stage 2, and the envelope 4 is covered with a cover 5 having a pressurized gas feed opening 7. This cover 5 is sealed to the envelope 4 airtightly while the outlet of the discharge opening is also closed airtightly. For operating the spinner constructed in this manner, nitrogen gas whose pressure is adjusted to be 2-3kg/cm<2> is injected through the feed opening 7. After the pressure is stabilized, a proper quantity of resist is dropped down from a nozzle 3 provided to pass through the envelope 4 and, simultaneously, the stage 2 is rotated at a predetermined rate so that the resist is diffused into a uniform thickness. |
