| 摘要 |
PURPOSE:To detect accurately a polishing position and to control the quantity of polishing with high precision by forming individual resistance elements with such length that the resistance value is varied at equal intervals in accordance with advance of polishing and equalizing their film thicknesses and widths to one another. CONSTITUTION:A thin film pattern 7 consists of 5 thin film resistance elements 8a-8e, which are parallel with a polishing face 1' of a substrate 1 and are arranged in order in the direction where the distance from the polishing face 1' is increased and are different in length as shown by oblique lines and consist of high resistance thin films of ''Permalloy'' or the like, and 2 thin film electrode conductors 9a and 9b which connect both ends of resistance elements 8a- 8e to form a parallel circuit of resistance elements 8a-8e and are extended in the polishing advance direction, namely in the direction vertical to the polishing face 1' and consist of conductive thin films of copper or the like. Resistance elements 8a-8e are formed with such length that the resistance value is varied at equal intervals in accordance with advance of polishing. |
