Method for more uniformly spacing features in a lateral bipolar transistor

摘要

The unique initial masking step is used in a method of more predictably and uniformly spacing features on a surface of a semiconductor device by combining it with two dielectric maskants. A unique semiconductor device masking is claimed in which semiconductor device features are initially spaced by means of pitch, i.e. line and a contiguous space, instead of just a line in the initial masking.