| 摘要 |
PURPOSE:To provide an epitaxial layer with better crystallization, by forming an opening through an insulating film being coated on an Si substrate, and by growing the opitaxial layer only in the opening after a polycrystalline or amorphous Si thin film touching the substrate surface is formed on the walls of the opening. CONSTITUTION:After an SiO2 film is coated on an Si substrate 11 and an SiO2 film pattern 12 with a vertical cross sectional area is formed with photolithography and reactive ion etching, a contaminated layer produced on the substrate 11 surface is removed with wet etching. Next, an amorphous Si layer 13 is deposited over all faces including top faces and side faces of the pattern 12, and the layer 13 only on the side faces of the pattern 12 is left and the other is removed with reactive ion etching. Thereafter, using H2 gas and SiH2Cl2 gas containing HCl gas of about 1vol%, an epitaxial layer 14 having the approximately same height as that of the pattern is grown. Accordingly, the epitaxial layer free from crystal defect which is surrounded by the amorphous layer can be provided. |
