| 摘要 |
PURPOSE:To prevent generation of field concentration on the interface of a P-N junction and a surface protective film by a method wherein a transparent electrode, on which a positive bias will be applied between light receiving parts, is provided on a surface protective film at the upper part of the P-N junction. CONSTITUTION:On a photodiode 15, a field concentration is generated between a junction 8 and an oxide film 11 by the internal electric field located in the vicinity of a P-N junction 8 due to application of an inverted bias voltage between a P-layer 7 and an N type Si substrate 6. However, the plus ions contained in an Si oxide film 11 are induced into an electrode 12 by biasing the transparent electrode 12 provided on the junction 8 equipotential to the substrate 6. As a result, the plus ions in the film 11 are not coupled with the minus ions in the substrate 6, the width of the junction 8 is widened to the width of the electrode 12, the generation of field concentration is prevented, a leakage current is suppressed, and the breakdown voltage of the junction 8 is improved. Accordingly, the generation of field concentration on the interface between the junction 8 and the film 11 can be prevented, and the leakage current can also be suppressed. |
