| 摘要 |
PURPOSE:To check generation of bird beaks when field oxide films are to be formed at manufacture of a semiconductor device by a method wherein oxidation checking films are formed selectively on an Si substrate, then epitaxial layers are grown on the exposed surfaces of the Si substrate, and then the epitaxial layers thereof are oxidized. CONSTITUTION:An Si3N4 film 13 is clad on a P type Si substrate 11 interposing an SiO2 film 12 between them, and patterning is performed to mask selectively element formation programing regions. Then Si epitaxial layers 14 are formed selectively only on field oxide film forming regions. Then after boron ions are implanted to the surfaces of the layers 14 using the films 13 as masks, high temperature oxidation treatment is performed to form field oxide films 15 according to oxidation. After the layers 14 are formed in such a way, when high temperature oxidation treatment is performed, creeping-in of molecular type steam under the films 13 is reduced, creeping-in is eliminated at least at the initial period of oxidation, and generation of bird beaks is suppressed. |
