| 摘要 |
PURPOSE:To enhance a packaging density of a memory device by approximating links with the same phases to different layers through a heat insulating layer and by arranging and forming them away from links with different phases from said links. CONSTITUTION:When MOSFETQ3 is destructed, links L5 and L6 connected to word lines WLn and WLn+1 are cut with laser, word line drive signals CR0 and CR1 will not be transmitted to the word lines WLn and WLn+1 and the selection of a defective row decoder, or reading/writing data from a defective bit will not be performed. Here, since the links L5 and L6 becoming those with the same phase are formed with different layers through a heat insulating layer, the former can bring much nearer to the latter, compared with the formation having the same layers and can be overlapped with the link L6. Moreover, a distance between links with different phases can be smaller. In this case the links with the same phases enter a laser spot simultaneously, laser positioning once is sufficient, and requirement with respect to positioning accuracy can be eased. Thus the entire packaging density can be enhanced. |
