| 摘要 |
PURPOSE:To enable an electrode layer provided in an aperture to have an increased thickness, by providing a resist pattern on a semiconductor layer, and vapor depositing a metallic thin film while irradiating an electronic beam to the resist so as to shrink the same and to enlarge the aperture provided in the resist. CONSTITUTION:A GaAs layer 2 is epitaxially grown on a GaAs substrate 1, and a source electrode 3 and a drain electrode 4 are adhered on the surface of the layer 2 while a gate electrode forming region is remained empty. A spacer 5 having a larger thickness only on its periphery is then provided in the empty part, and resist 7 is applied on the whole surface so as to have an aperture at the center of the empty part. A metallic thin film 8 is then vapor deposited with an electronic beam irradiated on the film 7 so that the film 7 is shrunk to enlarge the aperture thereof. Subsequently, this film 7 is removed together with the film 8 deposited on the same, and a gate electrode 6 is formed at the central portion of the spacer part 5 having an enlarged area. In such a manner, the gate electrode 6 of an FET can be formed into a substantially large thickness and therefore the electrode 6 with a low resistance can be obtained. |
