| 摘要 |
PURPOSE:To obtain a non-sensitive state on the region other than a light receiving part by a method wherein a leakage current removing part, on which a bias voltage the same as that which will be applied between a light receiving part and a substrate, is formed on the substrate surrounding the light receiving part. CONSTITUTION:The auxiliary P<+> layer 4 to be used for removing a leakage current is provided on a substrate 1 surrounding the main P<+> layers 2a and 2b which are used as a light receiving part, and an integration type photodiode 5 is formed. Then, a bias voltage same as that which will be applied between N<+> layers 1a and the layers 2a and 2b is applied between the layer 1 and the layer 4. If the titled device is constituted as above, a photoelectric current runs only on the closed circuit connecting the layer 1a and the layer 4 when a light is made incident on the layer 4 located on the region other than the light receiving part, and no photoelectric current flows on the side of the layers 2a and 2b as a leakage current. As a result, the photodiode having no sensitivity on the region other than the light receiving part can be obtained. |
