发明名称 |
Amorphous silicon semiconductor and process for same |
摘要 |
A process for preparing an amorphous silicon semiconductor comprising steps of plasma decomposing silicon compounds and carrying out photolysis of the silicon compounds. According to the process, the growth rate of the semiconductor is greatly increased. The obtained amorphous silicon semiconductor has excellent electrical and optical properties and is useful as a photovoltaic element.
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申请公布号 |
US4544423(A) |
申请公布日期 |
1985.10.01 |
申请号 |
US19840578939 |
申请日期 |
1984.02.10 |
申请人 |
KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA |
发明人 |
TSUGE, KAZUNORI;TAWADA, YOSHIHISA;HAMAKAWA, YOSHIHIRO |
分类号 |
C23C16/24;C23C16/48;H01L21/205;H01L31/075;H01L31/20;(IPC1-7):H01L31/18 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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