| 摘要 |
PURPOSE:To enable to perform a modulating operation in a highly accurate manner by a method wherein a layer, with which the light emitted by an active layer will be diffused, is provided between a substrate and the band gap layer of the size same as or smaller than that of the band gap of a laser part, and the laser part and a transistor part are separated to each other. CONSTITUTION:An n type InGaAsP layer 30 is formed between the n type InGa AsP substrate 1 of an optical integrated circuit device and an n type InP buffer layer 2, and resin 16 is buried until it reaches a layer 30. Using said layer 30, a prescribed band gas is formed in the direction as shown by an arrow 21 in the diagram, the light emitted from an active layer 3 is absorbed by the layer 30, and the light is prevented from reaching a transistor TR part. Also, the light making progress in horizontal direction is absorbed by the resin 16 shown by the arrow 22 in the diagram, and the light is prevented from reaching the TR part. Then, the laser part and the TR part are completely separated, and the adverse effect which will be given to the TR part by the light emitted from the laser part is eliminated, thereby enabling to perform a modulating operation in a highly accurate manner. |
