| 摘要 |
PURPOSE:To enable to alleviate the protrusions and recesses formed on a liquid-phase pattern as well as to prevent the increase in conductivity of crystal due to introduction of impurities by a method wherein the impurities, which will be in an electrically inert state even when they are contained in crystal, are introduced into the melt containing an epitaxial crystal component element to be contacted to the crystal on a substrate. CONSTITUTION:The impurities, which will be electrically inert even when they are contained in crystal, are introduced into the melt containing an epitaxial crystal component element to be contacted to a substrate crystal. For example, tin is added as the electrically inert impurities into an unsaturated melt containing mercury, cadmium and tallurium element in a quartz closed pipe, and the above is maintained at 500 deg.C for 60min. Then, the cadmium-tellurium crystal same as the substrate crystal is used as a solute source crystal, it is brought to come in contact with the above-mentioned unsaturated melt, and saturated by maintaining it at 500 deg.C for 60min. Then, the cadmium- tellurium substrate crystal which is going to be grown is contacted to said saturated melt, they are maintained at 500 deg.C for 60min, cooled at the cooling speed of 0.05 deg.C/min. for 400min, and an epitaxial layer having the expected composition of mercury- cadmium-tellurium and the introduced tin of 10<18>cm<-3> is obtained. |
