| 摘要 |
PURPOSE:To improve durability by etching the surface of a substrate by sputtering before the sputtering of a magnetic thin film is carried out. CONSTITUTION:The glass substrate 1 is held by the substrate holder of a bipolar RF sputtering device, and a target (several 10X10mm.<2> terbium chips 3 arranged uniformly on 100mm.phi cobalt disk 2; Tb0.27C0.73) is placed on a packing plate or copper. Then, vacuum frost is discharged and gaseous Ar is admitted; and the glass substrate 1 is etched by sputtering for >=10min with a shutter 5 closed. Then, the shutter is opened to perform primary sputtering. When an angle thetak of Kerr rotation and an angle thetaF of Faraday rotation are measured while the film thickness of a Tb-Co amorphous alloy film after sputter etching is performed for 60min is varied, an ineffective layer having no photomagnetic effect is obtained below 60Angstrom film thickness. Therefore, the film thickness of a Tb-Co amorphous alloy recording layer should be at least >=60Angstrom . Consequently, the Tb-Co amorphous alloy recording layer formed on the sputter-etched substrate has high acid resistance. |
