| 摘要 |
PURPOSE:To perform respective processes at room temp. and to obtain a fine pattern with high accuracy by forming a thin film which is more easily soluble than a thermally unstable work on said work and forming the pattern of a resist film on the thin film then etching the work with said pattern as a mask. CONSTITUTION:LiNbO8 is susceptible to distortion and failure with an abrupt change in temp. A thin film 12 of Al or the like which is more easily soluble in an acid and etchable than such work 11 is formed on the work. A resist layer 13 consisting of PMMA, etc. is provided on the film 12 and is developed by MIBK, etc. after drawing by an electron ray by which a resist pattern 13 is formed. The pattern is then transferred simultaneously to the Al thin film 12 and the substrate LiNbO8 11 by Ar ion beam etching. The films 12 is removed by hydrochloric acid, nitric acid, etc. and the residual resist film 13 thereon is removed. The fine pattern is thus satisfactorily formed on the thermally unstable substrate 11 consisting of a ferrodielectric crystal, etc. by which an integrated circuit, etc. are obtd. |
