| 摘要 |
PURPOSE:To obtain a resist pattern without using a harmful solvent at the time of development by dissolving polyether having carboxylic groups together with another polymer in a solvent, and using the obtained soln. as the material of a resist film. CONSTITUTION:Polyether having carboxylic groups is prepared by reacting 4,4- bis-p-hydroxyphenylpentanoic acid with 1,4-dichlorobutane in the presence of caustic alkali, etc., as a catalyst, or the like method. This polyether is dissolved in combination with another polymer, such as a methyl alpha-chloroacrylate/methacryloyl chloride copolymer, to form the material of a resist film. The substrate to be treated is coated with said resist material, and patternwise exposed, and developed with an alkali type soln. to form a positive type resist pattern. |
