发明名称 ETCHING OF INTERLAYER INSULATION FILM
摘要 PURPOSE:To provide a through hole of desired shape to the interlayer insulation film by freely changing the shape of heat wire or ion beam in the reactive gas ambience for the operation. CONSTITUTION:The shape of heat wire and ion beam shows the Gaussian distribution. In the case of converged type ion beam, the diameter is about 0.1mum and the shape can be reproduced with high accuracy. The shape of beam become trapezoidal due to the lateral scanning and when the intensity is changed during the scanning, the desired shape can be obtained. When etching is carried out by irradiating the insulation film 2 in the reactive gas ambience, the shape of etching surface can be resembled to the shape of irradiation beam 6.
申请公布号 JPS61137327(A) 申请公布日期 1986.06.25
申请号 JP19840260352 申请日期 1984.12.10
申请人 NEC CORP 发明人 MIZUTA TAKAYUKI
分类号 H01L21/302;H01L21/3065;(IPC1-7):H01L21/302 主分类号 H01L21/302
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