MANUFACTURE OF DI (DIELECTRIC ISOLATION) SUBSTRATE

摘要

PURPOSE:To enable the accurate determination of the position to finish the polishing, by forming some grooves deeper than the other grooves so as to use the deeper grooves as markers for indicating the finishing position of the wrapping process and the starting position of the polishing process. CONSTITUTION:A silicon single crystal phase 1 is anisotropically etched to form V-shaped grooves 3 such that some grooves 3' are formed deeper than the other grooves 3. The deeper groove 3' is used as a marking groove. Since the angle made in the bottom of the V-shaped groove is determined to be constantly theta independently from the depth of the groove because of the characteristics of the anisotropic etching of the silicon single crystal, the depths D and DM of the groove 3 and the marking groove 3' are each determined only by a width of the etching pattern of an insulation film 2. When the polishing width P is determined, the width WM of the pattern of the marking groove 3' can be found through calculation.