| 摘要 |
PURPOSE:To elevate the reliability of a head with easier manufacture of a driving circuit by a method wherein a special polycrystalline silicon layer is provided on an SiO2 layer formed on a substrate, heated to be crystallized and then, a semiconductor functioning element is formed to drive a heat generating body. CONSTITUTION:A layer of SiO2 is formed on a heat resistant substrate 1 of a high heat conductivity such as alumina or beryllia, for example, by high frequency sputtering. Then, land-like polycrystalline silicon layers 3 connected together in one way are formed on the layer at the thickness of 0.5-1mum, for example, by CVD and then, melted under heat by a local heating using laser or electron beam or a widely accepted method such as zone melting to form a monocrystalline layer by recrystallization. Then, a thin film transistor is built by a well- known semiconductor device process to form a driving element on the substrate of a thermal head. |
