| 摘要 |
PURPOSE:To avoid the generation of an N<+> region under the side surface of a Schottky gate electrode by a method wherein annealing is carried out in the state of coating with an SiO2 film after at least the side surface of the Schottky gate electrode is thinly oxidized or nitrided. CONSTITUTION:A channel region 2 is selectively formed in a semi-insulation GaAs substrate 1, which is then coated with a W-Al alloy film 3. Thereafter, a metallic mask 4 is selectively formed, and a gate electrode 3 is formed by etching the W-Al alloy film with the mask of this metal 4. A source region 5a and a drain region 5b are formed by ion implantation, and the mask 4 is then removed. After such a formation of the Schottky gate electrode 3, the front and side surfaces of the gate electrode 3 are oxidized by flowing only oxygen gas and argon gas, and silane gas is flowed, resulting in the deposition of an SiO2 film 6. After activation annealing of the regions 5a and 5b, the SiO2 film 6 is removed, and electrodes are formed on the source region 5a and the drain region 5b. |
