发明名称 CONTACT EXPOSING METHOD
摘要 PURPOSE:To prevent a pitch error and to realize an excellent contact state wherein there is no gas confinement by discharging gas between bodies such as a mask and a wafer and bringing the both in contact with each other, and performing exposure. CONSTITUTION:The mask 1 and wafer 3 are set on a mask support base and a wafer chuck 4 which are sealed with a vacuum leak preventing layer 5. The mask 1 and wafer 3 are arranged opposite by a driving device at a specific interval. A vacuum chamber 6 is evacuated through a vacuum line 8 and spaces 14 and 15 are also evacuated through a vacuum line 16. At this time, the mask 1 is pressed against a mask holder 2 across a cushion member 12 because of the atmospheric pressure applied to the top surface of a glassy member 10 and then fixed. The wafer chuck 4 is elevated by a driving means to bring the wafer 4 into contact with the mask 1, and the both are pressed against each other by decreasing the degrees of vacuum of the spaces 14 and 15 to perform exposure. Consequently, a pitch error is prevented and an excellent contact state wherein there in no gas confinement is obtained.
申请公布号 JPS60189745(A) 申请公布日期 1985.09.27
申请号 JP19840044827 申请日期 1984.03.10
申请人 CANON KK 发明人 TOTSUKA MASAO
分类号 H01L21/027;G03B27/20;G03F7/20 主分类号 H01L21/027
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