LATERAL EPITAXIAL GROWTH BY SEEDED SOLIDIFICATION.

摘要

An improved method and apparatus for crystallizing amorphous or polycrystalline material. In this invention, a material which is to be crystallized is formed on the substrate (10) and single crystalline seed material (18) is disposed in contact and/or adjacent to or with at least a portion of the material which is to be crystallized. A layer of material (20) which serves as a "wetting agent" is then formed over the material (18) to be crystallized. The structure thus formed is subjected to a heat treatment which melts the material (18) being crystallized and when the material solidifies its crystalline structure is substantially epitaxial based on the seed material. The "wetting agent" layer (20) serves to prevent deleterious balling up of the material during crystallization.