| 摘要 |
PURPOSE:To obtain a stable interlayer insulating film to be used for the multilayer wirings of a semiconductor device, etc. by a method wherein the interlayer insulating film is constructed of a laminate containing a polyimide resin film, and both or any one side of a metal Cr film and a Cr oxide film. CONSTITUTION:A first polyimide resin film 13 is formed on a substrate 11 formed with lower part electrodes 12 of the plural number of pieces, and Cr metal or Cr oxide is coated thereon according to the sputtering method or the evaporation method to form a film 14. A second polyimide resin film 15 is formed to form an interlayer insulating film 16 consisting of the films 13, 14, 15. A through hole 18 is formed, and an upper part electrode 19 is adhered to be formed. According to employment of the polyimide resin film, the degree of flatness of the surface of the device is enhanced. Because the metal Cr film and/or the Cr oxide film is utilized, stress of polyimide resin is relieved to enable to check generation of a crack, and moreover, the projection of a lower part electrode such as an Al electrode, etc. can be checked effectively. |
