| 摘要 |
PURPOSE:To contrive to enhance the operating speed, and to enhance integration of a semiconductor integrated circuit device by a method wherein wirings between unit cells accommodating the functional circuits of various kinds are formed by using metal layers of at least two layers insulated mutually. CONSTITUTION:The output wiring of a unit cell 11a is led out to a channel region 121 according to a second layer aluminum wiring L1, and connected to the input gate electrode of a unit cell 11p through a contact 241, a first layer aluminum wiring L2, a contact 242 and a poly-silicon wiring L3. Moreover, a second layer aluminum wiring L4 connected to the first layer aluminum wiring L2 through a contact 243 is wired on a unit cell 11i interposing an insulating layer between them, and connected to the input gate electrode of a unit cell 11n through a contact 244, a first layer aluninum wiring L5, a contact 245, and a poly-silicon wiring L6. It is unnecessary to provide a through region between unit cells, and high integration can be attained. |
