| 摘要 |
<p>PURPOSE:To check generation of an electric short between a pad and a substrate even when a damage part is generated according to a probing test at manufacture of a semiconductor device by a method wherein pads having a probe part and a bonding part separately are formed. CONSTITUTION:A conductive layer 40 of aluminum is formed extending over a pad region 41 for probing, a channel part 42, and a pad region 43 for bonding on a field oxide film 101 on a substrate 100. A first layer cover film 104 is provided on the conductive layer of the channel part 42 and the pad region 43 for bonding. A test is performed by making a probe 3 to come in contact with the pad region 411 for probing. A second cover film 105 is applied extending over the whole surface of the chip, and etching is performed as to expose only the part corresponding to a conductive part 431 for bonding in the region 43. Even when a damage part 412 is generated in the aluminum layer 411 according to press of the probe 3, erosion of the field oxide film 101 through the damage part 412 is not generated.</p> |
