| 摘要 |
PURPOSE:To bond an electrode terminal of a semiconductor element to a film lead in a simple process and at a low cost, by forming an Au projection on the electrode terminal, and heating it so as to cause the film lead to enter into the projection and to form alloys. CONSTITUTION:An element 3 is provided in an aperture of an SiO2 film 2 on a silicon substrate 1. An aluminium electrode wiring 4 is led out and a protection film 5 is formed thereover except the region of an electrode terminal 4'. Au projections 6 are formed on the electrode terminal 4' by means of electrolytic plating. Each of the Au projections 6 is registered with a lead 12 which is formed on an elongated resin film 11 and plated with Sn, and they are pressurized and heated with a bonding tool 13. The Au projection 6 is thereby crushed, and the lead 12 is bonded to the Au projection 6 with alloy of Au and Sn. The Au projection 6 is bonded to the aluminium electrode 4' with alloy of Au and Al. Thus, strong bonding strength can be obtained. |
