| 摘要 |
PURPOSE:To obtain a photoelectric conversion element of high sensitivity and high S/N ratio of one-dimentional image sensor to be used for a facsimile, etc. by a method wherein a charge transfer device is used for a scanning device, and integrated in one body with a substrate. CONSTITUTION:A photoelectric conversion film 11 and a second substrate 12 containing a charge transfer device are set up on a first substrate 10, and the unit elements of the photoelectric conversion device 11 are connected electrically to the substrate 12 according to wiring electrodes 13. Diodes 18 to store electric charges excited by the photoelectric conversion film 11, and a CCD19 are provided in an Si substrate 17, gate electrodes 20 to read signal electric charges stored in the diodes 18, and gate electrodes 21 to transfer electric charges in the CCD19 are provided. Because the area of the light receiving part of the photoelectric conversion film becomes larger as compared with the area of the single photo diode of the CCD, the device is high sensitivity, and because the CCD is used, spike noise, etc. is not generated, and the device is a high S/N ratio and moreover reading in a high speed can be attained. |
