Integrated circuit comprising field effect transistors and a programmable read-only memory.

摘要

Field effect transistors having a short channel length are desirable for carrying out logic operations at a high speed. However, they are then not capable of withstanding the comparatively high programming and erasing voltage at which an (E)EPROM has to be operated. During the programming cycle the said field effect transistors are kept in the current-non-conducting state, whilst recording the logic information obtained by the logic operations, the "fast" transistors are nevertheless capable of withstanding the said comparatively high voltage.