发明名称 HALL ELEMENT
摘要 In an integrable Hall element, which includes a semiconductor layer of a single conductive type, a plurality of current electrodes adapted for being connected to an energy source, and wherein at least one current electrode and two sensor electrodes are located on a surface of the Hall element, and the one current electrode has a first connecting contact forming a first energy source pole, the improvement comprises the one current electrode being approximately located in the center of a line connecting the sensor electrodes. The remaining current electrodes are distributed current electrodes which have a second connecting contact, and a second energy source pole is formed by the distributed current electrodes; the distributed electrodes are so located with respect to the one current electrode so that all currents flowing between the one electrode and the distributed electrodes form a resultant current vector extending in the vicinity of the one current electrode substantially at right angles to the surface of the semiconductor layer.
申请公布号 JPS60187072(A) 申请公布日期 1985.09.24
申请号 JP19840248295 申请日期 1984.11.26
申请人 ERU GEE TSUETSUTO RANDEISU UNTO GIIRU TSUUKU AG 发明人 RADEIBUOOE POPOBUITSUKU
分类号 G01R15/20;G01R21/08;H01L29/82;H01L43/06 主分类号 G01R15/20
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