| 摘要 |
PURPOSE:To lower the resistance of a semiconductor amorphous film with-out generating a defect in a section except the film by projecting ultraviolet laser beams having a wavelength of 150-370nm when the semiconductor amorphous film is formed on a glass substrate through a CVD method and the resistance of the film is lowered. CONSTITUTION:An amorphous silicon film is formed on a glass substrate through a plasma CVD method, and the film is irradiated by ultraviolet laser beams having the wavelength of 150-370nm to lower the resistance of the film. In this case, the energy density of ultraviolet laser beams is specified to 50mJ/ cm<2>-2.0J/cm<2>, and ArF excimer laser beams, KrF excimer laser beams, XeCl excimer laser beams, XeF excimer laser beams, etc. are used as ultraviolet laser beams. Accordingly, the film is changed into crystallites or polycrystals, the activity ratio of a dopant is improved and a resistance value is reduced. |
