| 摘要 |
PURPOSE:To avoid the breaking of an insulating film formed on a wafer by simultaneously changing over the polarity of ion acceleration voltage applied to an ion source, the polarity of a magnetic field separating the mass of ion beams and the polarity of an ion current detector by using a control system and alternately implanting anions and cations onto the wafer. CONSTITUTION:Ion beams 2 from an ion source 1 are separated into specific ion beams 2' by using an electromagnet 3, and the ion beams 2' are injected to wafers 6 on a rotating disk 5 mounted to an ion implanting chamber 4 through insulating layers applied on the wafers. In the constitution, an ion source controller 7 with a polarity changeover device 7' is connected to the ion source 1, an electromagnet controller 8 with a polarity changeover device 8' to the electromagnet 3 and an injecting chamber controller 9 with a polarity changeover device 9 to the injecting chamber 4 respectively, and these controllers are controlled by a CPU10 to which an external memory storage 11 and a display device 12 are connected. Accordingly, the accuracy of implantation is improved while the breaking of films is avoided. |
