| 摘要 |
PURPOSE:To obtain a basic transverse mode without incorporating a narrow activation layer and improve production yield by a method wherein a portion of an optical waveguide formed between planes of cleavage is narrowed between two semicircular cutouts. CONSTITUTION:An N-InP clad layer 8, N-InGaAsP layer 9, and P-InP clad layers 10 are grown on an N-InP substrate 7 by the liquid phase epitaxial methed, and a portion is narrowed of the laminate of the layers 9, 10 constituting an optical waveguide. The narrowed portion is 1.5mum wide, satisfying the conditions a basic transverse mode should demand. |
