| 摘要 |
PURPOSE:To stabilize the electric characteristics in a groove by a method wherein an impurity diffusion layer is provided on an angled corner of a groove of semiconductor device. CONSTITUTION:A V-type groove 12, a field oxide film 15, a source diffusion region 13, a drain diffusion region 14 are formed on the surface of an Si substrate 11, while a gate oxide film and a gate electrode 17 thereon are formed on the surface of the groove 12. Besides an impurity diffusion layer 18 is formed on an angled corner of the groove 12. Through these procedures, the electric characteristics of an element may be stabilized by means of eliminating the influence of electric characteristics from the angled corner. |
