| 摘要 |
PURPOSE:To contrive the improvement in insulating property of the insulating layer of a protruded part and a gate insulating layer by a method wherein a discontinuity surface generating on the boundary of a double-layer insulating layer is shielded with an oxidation resistant layer being formed in flaw-like manner, and an insulating layer is coated on the side face of the protruded part and a substrate. CONSTITUTION:An insulating layer 32, a conductive layer 33 to be used for formation of a gate an insulating layer 34, and an oxidation-resistant layer 35 are successively formed on a P type Si substrate 31. Then each coated layer, excluding a gate part, is removed by performing a patterning, and a protruded part is formed. Subsequently, the side face of the layer 34 is removed, and flaws are formed on the layer 35. Then, an insulating layer 36 is coated on the side face of the protruded part and the substrate 31. Then, an insulating layer 37 is covered on the protruded part. Subsequently, an anisotropic etching is performed on the whole surface of the substrate 31, and the substrate 31 is exposed. Then, a source and drain region and a conductive layer and the like to be turned to the basemental electrode of a capacitor are formed by performing a self-matching using the protruded part. According to this type of constitution, the insulating property of the protruded part can be improved because the discontinuity surface generated at the boundary of the layers 34 and 37 is shielded by the layer 35. Also, the insulating property of the end face of a gate insulating layer can be improved by the help of the layer 36. |
