| 摘要 |
PURPOSE:To enable to connect a transistor and a flywheel diode without using a bonding agent by a method wherein the transistor and the flywheel diode are constituted in the same semiconductor substrate. CONSTITUTION:A transistor (TR) part (a) and a flywheel diode part (b) are formed on a semiconductor substrate 14, a collect or an electrode and a cathode electrode are formed in the same electrode 17 and an emitter electrode 7 and an anode electrode 16 are connected using welding pressure. Each edge of the junction part J1, located between the base 4 of the TR part (a) and an n type high resistance layer 2, and the junction J2 of an anode 15 and a layer 2 are individually exposed on the main surface of a substrate 1, and the TR part (a) and the diode part (b) are separated at the part of an isolation region (c). As the interval W between the junctions B1 and B2 is formed in a sufficiently narrow structure so that a depletion state can be obtained at the voltage lower than the withstand voltage of the junction J1 and J2, the lowering of withstand voltage can be prevented. According to this constitution, the bonding agent to be used for connection of the TR and the diode is unnecessitated. |
