| 摘要 |
PURPOSE:To obtain a light-emitting diode having high luminance by laminating and forming a GaAs1-xPx layer, As concentration therein gradually increases, a GaAs1-xPx layer, As concentration therein is fixed, and a GaAs1-xPx layer in which N2 atoms having constant concentration are made to include on a single crystal substrate. CONSTITUTION:A GaP layer 2 in 5mum thickness, a GaAs1-xPx layer 3 (0<1-x <=0.5), an As component composition ratio thereof increases, in 35mum thickness, a GaAs1-xPx layer 4 (0<1-x<=0.5) in 10mum thickness, a GaAs1-xPx layer 5, N2 concentration therein gradually increases, in not more than 5mum thickness, and a GaAs1-xPx layer 6, N2 concentration therein is fixed, in not more than 40mum thickness are all laminated and grown on a GaP single crystal substrate 1 in 300mum thickness through an epitaxial method. The (x) values of the layers 5 and 6 are selected within the same extent as 0<1-x<=0.5 at that time. Accordingly, N2 concentration in the layer 5 is increased gradually and made constant and crystal defects are reduced, and the quality of a crystal in a light-emitting recombination region is improved, thus enhancing the characteristics of a diode. |
