| 摘要 |
PURPOSE:To obtain a low-temperature forming film having high accuracy by previously providing a gas reaction chamber with a means, through which a semiconductor substrate is heated at a fixed temperature, and a decompression means, through which the inside of the gas reaction chamber is decompressed, in a low-temperature CVD production equipment in which a microwave excitation chamber and the gas reaction chamber are separated. CONSTITUTION:The titled production equipment is constituted by separating a microwave excitation section 10 generating plasma and a gas reaction chamber 11, an O2 transport pipe 12 is fitted to the excitation section 10, and a large number of plasma nozzles 13 intruding into the reaction chamber 11 are fitted at the nose section of the transport pipe 12. A heater heating plate 15 on which a large number of semiconductor substrates 14 are placed, nozzles 16 and 17 for a forming gas joining with the nozzles 13, and a decompression mechanism section 25 for decompressing the inside of the chamber 11 are mounted into the reaction chamber 11. The decompression mechanism section 25 is constituted by an exhaust section 24 and an exhaust pipe 26, and gases for a reaction and doping are each flowed through the nozzles 16 and 17 for the forming gas through valves 18 and 19 and mass flowmeters 20 and 21. In the constitution, the temperatures of the substrates 14 are brought to 50-300 deg.C, and pressure in the chamber 11 is regulated to 0.1-10Torr. |
