| 摘要 |
A process is provided for imaging a multi-layer resist structure which comprises providing a first layer of a first resist material onto a second and different resist material where the second resist material is a photosensitive material having limited sensitivity to the imaging radiation for the first layer. The first layer is exposed to imaging radiation and developed, and is exposed to ultraviolet light radiation of predominantly wavelengths of about 260 nm. and above in order to harden the first layer. The second resist material is exposed to radiation at wavelengths of 250 nm and below, and developed. |
