| 摘要 |
PURPOSE:To produce a single crystal thin film of good quality in a nonsingle crystal region, by forming a nonsingle crystal thin film on a substrate, applying a thin antireflection film thereto, forming a film having light absorption properties of smaller width than the diameter of energy beams, and irradiating the film with the energy beams. CONSTITUTION:A polycrystal silicon thin film 5 having light absorption properties is formed on a ground insulating substrate 1, and a laminated antireflection film 6, e.g. SiO2 or Si3N4, is formed further on the resultant thin film 5. A light- shielding polycrystal silicon film 7 having light absorption properties of smaller width than the diameter of laser beams 8 is formed thereon. The resultant construction is irradiated with the laser beams 8, which are incident upon a part 51 uncoated with the light shielding polycrystal silicon film 7 to increase the temperature, and the light-shielding film 7 coating the part 52 absorbs the laser beams 8 to increase the temperature and conduct the temperature through the SiO2 film 6. Thus, the temperature distribution is such that the central part 52 of the polycrystal silicon film 5 is low and the periphery is high. Nuclei are formed in the central part 52, and grow to form the aimed single crystal thin film. |
